| PART |
Description |
Maker |
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
| STP80N20M5 STB80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package
65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
|
ST Microelectronics
STMICROELECTRONICS
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| HUF75332S3S HUF75332P3 HUF75332G3 FN4489 |
60A/ 55V/ 0.019 Ohm/ N-Channel UltraFET Power MOSFETs
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| BUK9618-55A/T3 |
61 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| BUK9Y19-75B |
N-channel TrenchMOS logic level FET 48.2 A, 75 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| HPLU3103 |
52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs
|
Fairchild Semiconductor
|
| CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C |
CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S)
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| SML10B75XX |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
| NTD5806NT4G |
40V, 18 mOhm, N-Channel, D-Pak, MOSFET 33 A, 40 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
|
